IPP048N04N G datasheet

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О ДАТАШИТЕ

• Маркировка
  IPP048N04N G
• Производитель
  Infineon Technologies
• Описание
  Infineon Technologies IPP048N04N G Configuration: Single Continuous Drain Current: 70 A Drain-source Breakdown Voltage: 40 V Fall Time: 4 nS Gate Charge Qg: 31 nC Gate-source Breakdown Voltage: +/- 20 V Maximum Operating Temperature: + 175 C Minimum Operating Temperature: - 55 C Mounting Style: Through Hole Package / Case: TO-220-3 Part # Aliases: IPP048N04NGXK IPP048N04NGXKSA1 SP000648308 Power Dissipation: 79 W Resistance Drain-source Rds (on): 4.8 mOhms at 10 V Rise Time: 3.2 nS Rohs: yes Transistor Polarity: N-Channel Typical Turn-off Delay Time: 19 nS RoHS: yes Drain-Source Breakdown Voltage: 40 V Gate-Source Breakdown Voltage: +/- 20 V Resistance Drain-Source RDS (on): 4.8 mOhms at 10 V Typical Turn-Off Delay Time: 19 nS
• Количество страниц
  9 шт.
• Форматы файла
  HTML, PDF

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